Specifications Product Type Gaming RAM Brand HyperX CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns(min.) Refresh to Active/RefreshCommand Time (tRFCmin) 260ns(min.) Row Active Time (tRASmin) 35ns(min.) Maximum Operating Power TBD W UL Rating 94 V – 0 Operating Temperature 0o C to +85o C Storage Temperature -55o C to +100o C JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply VDDQ 1.5V (1.425V ~ 1.575V Programmable CAS latency 11, 10, 9, 8, 7, 6 Programmable Additive Latency 0, CL – 2, or CL – 1 clock Burst Length 8 (interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS) Features Bi-directional Differential Data Strobe Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset Height 1.311 (33.30mm), w/heatsink, double sided component
Genuine HyperX Savage 8GB 1866MHz DDR3 Non ECC CL9 DIMM XMP Internal Memory
HyperX Savage 8GB 1866MHz DDR3 Non-ECC CL9 DIMM XMP Internam Memory







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